Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect
a) Schematic band gap diagram of the n -GaN /Al2O3/ p -ZnO structure.... | Download Scientific Diagram
The stability of aluminium oxide monolayer and its interface with two-dimensional materials | Scientific Reports
Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download Scientific Diagram
BALD Engineering - Born in Finland, Born to ALD: Study on band-gaps of a variety of classic ALD high-k´s via REELS
Energy-band alignment of atomic layer deposited (HfO<sub>2</sub>)<sub><em> x</em></sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1 − <em> x</em></sub> gate dielectrics on 4H-SiC<xref ref-type="fn" rid="cpb142427fn1">*</xref>
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect
Band Offset and Electron Affinity of Monolayer MoSe2 by Internal Photoemission
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying
Energy band gaps for -Al2O3, r-TiO2, m-ZrO2 and m-HfO2 calculated with... | Download Scientific Diagram
Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor: Applied Physics Letters: Vol 107, No 14
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying
Figure 5 from Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys | Semantic Scholar
1 Electronic and Optical Properties of γ- and θ- Alumina by First Principle Calculations Ahmed S. Jbara1, 2, 3, *, Zulkafli Ot
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetri
Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download Scientific Diagram
Interfacial thermal stability and band alignment of Al2O3/HfO2/Al2O3/Si gate stacks grown by atomic layer deposition - ScienceDirect
Interface characterization of atomic layer deposited Al2O3 on m-plane GaN
Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers: Applied Physics Letters: Vol 104, No 16
IETS spectrum and trap energy level within the Al2O3 band gap. (a)... | Download Scientific Diagram
